Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers

Kim, Hyun Woo; Kim, Dong Hun; You, Joo Hyung; Kim, Tae Whan

doi:10.1587/transele.E93.C.651

상세 보기

Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers

Kim, Hyun Woo;
Kim, Dong Hun;
You, Joo Hyung;
Kim, Tae Whan

Citations

WEB OF SCIENCE

1

Citations

SCOPUS

1

초록

The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al2O3 and SiO2 stacked tunneling layers were investigated. The electron and hole drifts in the Si3N4 layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO2 and Al2O3 stacked tunneling layers.

키워드

SANOS; SONOS; charge transport; silicon nitride; stacked tunneling layer; CHARGE-TRANSPORT; NITRIDE; SONOS

제목: Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers

저자: Kim, Hyun Woo; Kim, Dong Hun; You, Joo Hyung; Kim, Tae Whan

DOI: 10.1587/transele.E93.C.651

발행일: 2010-05

유형: Article

저널명: IEICE Transactions on Electronics

권: E93C

호: 5

페이지: 651 ~ 653