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Epitaxial growth of GaN films on Cr-compound buffer layers by plasma assisted molecular beam epitaxy
- Park, Jinsub;
- Lee, Wook Hyun;
- Lee, Seog Woo;
- Ha, Jun-Seok;
- Cho, Meoung Whan;
- 외 1명
Citations
SCOPUS
1초록
Epitaxial GaN layers were successfully grown on Al2O3 substrate with CrN buffer layer by plasma assisted molecular beam epitaxy (PA MBE). In order to form CrN layer, two kinds of formation methods are used such as nitridation of Cr-metal and conventional MBE growth without extra process. With reflection high energy electron diffraction pattern analysis and x-ray diffraction (XRD) measurement, it was confirmed that formed CrN layers have a cubic structured (111) CrN with single phase at all growth temperatures. Based on photoluminescence and XRD measurements, we suggest that the procedure of CrN buffer layer formation is more preferred the conventional MBE growth to nitrided Cr metal layer for GaN growth.
키워드
Buffer; CrN; Molecular beam epitaxy; Nitride; Buffer; CrN; CrN buffer layer; Formation method; GaN growth; GaN layers; Growth of GaN; MBE growth; Metal layer; Nitrided; Plasma assisted molecular beam epitaxy; Single phase; XRD measurements; Buffer layers; Chromium; Diffraction; Epitaxial films; Gallium nitride; High energy electron diffraction; Molecular beam epitaxy; Molecular beams; Optical waveguides; X ray diffraction; X ray diffraction analysis; Epitaxial growth
- 제목
- Epitaxial growth of GaN films on Cr-compound buffer layers by plasma assisted molecular beam epitaxy
- 저자
- Park, Jinsub; Lee, Wook Hyun; Lee, Seog Woo; Ha, Jun-Seok; Cho, Meoung Whan; Yao, Takafumi
- 발행일
- 2011-04
- 유형
- Article
- 권
- 8
- 호
- 07
- 페이지
- 2013 ~ 2015