Optical, structural, and magnetic properties of p-type InMnP : Zn implanted with the Mn (1 and 10 at.%)

  • Shon, Yoon-Kyung
  • Jeon, Hee Change
  • Park, Chang Soo
  • Kim, H. S.
  • Kang, Tae Won
  • ... Yoon, Chong Seung
  • 외 6명
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초록

The p-type InP:Zn was prepared by the liquid encapsulated Czochralski method and subsequently implanted with Mn+ of 5 x 10(15) cm(-2) (1 at.%) and 5 x 10(16) cm-2 (10 at.%). The results of energy dispersive X-ray showed that the concentrations of Mn incorporated into InP:Zn is about I and 10 at.%. For photoluminescence measurements, the Mn-related optical transitions of the InMnP:Zn samples annealed at 350 degrees C for 60 s and at 450 degrees C for 30 s with Mn (I at.%) were broadly observed at the energy region around 1.0 eV. The InMnP:Zn samples implanted with Mn (I at.%) clearly showed ferromagnetic hysteresis loops at 10 K, and the ferromagnetic behavior was observed to persist up to 291 K. Curie temperature (T-C) at 291 K has originated from MnP. The InMnP:Zn samples implanted with Mn (10 at.%) were annealed at 350 degrees C for 60 s and at 450 degrees C for 30 s. Using transmittance electron microscopy, both single crystalline and polycrystalline structures containing MnP and InMn3 sized similar to 20 urn were observed depending on the annealing condition. These samples exhibited two different Curie temperatures: TC I at 291 K and another (TC2) well above 291 K. The high-temperature ferromagnetic behavior up to T-c1 and above TC2 is believed to have originated from two magnetic MnP and InMn3 phases, respectively.

키워드

semiconductorscrystal structure and symmetryoptical propertiesNEUTRAL MANGANESE ACCEPTORGAN EPILAYERSSEMICONDUCTORSIONSFERROMAGNETISMINP
제목
Optical, structural, and magnetic properties of p-type InMnP : Zn implanted with the Mn (1 and 10 at.%)
저자
Shon, Yoon-KyungJeon, Hee ChangePark, Chang SooKim, H. S.Kang, Tae WonLee, SejoonKim, Jin SoakKim, Eun KyuYoon, Chong SeungKim, Chang KyungFu, D. J.Fan, X. J.
DOI
10.1016/j.ssc.2007.08.005
발행일
2007-10
유형
Article
저널명
Solid State Communications
144
3-4
페이지
128 ~ 133