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Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors with High Mobility Exceeding 100 cm2/Vs
- Kim, Bo Kyoung;
- On, Nuri;
- Choi, Cheol Hee;
- Kim, Min Jae;
- Kang, Shinhyuck;
- ... Jeong, Jae Kyeong;
- 외 1명
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76초록
This letter reports the fabrication of high performance polycrystalline InGaSnO (IGTO) thin-film transistors (TFTs) at a low temperature of 400 °C. The microstructure of IGTO films was analyzed using X-ray diffraction and high-resolution transmission electron microscopy. The fabricated polycrystalline IGTO TFTs exhibited an unexpected high mobility of 116.5 cm2/Vs, threshold voltage of 0.47 V, low subthreshold gate swing of 134 mV/decade, and {I}_{ON/OFF} ratio of > 1times 10{9}. Moreover, the stable behavior against external gate bias stress was observed for crystalline IGTO TFTs, which was attributed to the high degree of metal-oxygen lattice ordering.
키워드
Crystallization; high mobility; indium gallium tin oxide; reliability; thin-film transistors; Gallium compounds; High resolution transmission electron microscopy; Indium compounds; Temperature; Thin film circuits; Thin films; Threshold voltage; Tin oxides; Gate-bias stress; High mobility; Low temperatures; Oxygen lattice; Polycrystalline; Subthreshold; Thin-film transistor (TFTs); Tin oxide thin film; Thin film transistors
- 제목
- Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors with High Mobility Exceeding 100 cm2/Vs
- 저자
- Kim, Bo Kyoung; On, Nuri; Choi, Cheol Hee; Kim, Min Jae; Kang, Shinhyuck; Lim, Jun Hyung; Jeong, Jae Kyeong
- 발행일
- 2021-03
- 유형
- Article
- 권
- 42
- 호
- 3
- 페이지
- 347 ~ 350
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1558-0563
P 0741-3106