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Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si
- Park, Taehee;
- Park, Eunkyung;
- Ahn, Juwon;
- Lee, Jungwoo;
- Lee, Jongtaek;
- ... Kim, Jae-yong;
- ... Yi, Whikun;
- 외 1명
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5초록
N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/mu m were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.
키워드
n-Type ZnO nanorod; Porous silicon; Photoluminescence; Electroluminescence; Field emission; CARBON NANOTUBES; NANOWIRE ARRAYS; PHOTOLUMINESCENCE; SILICON
- 제목
- Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si
- 저자
- Park, Taehee; Park, Eunkyung; Ahn, Juwon; Lee, Jungwoo; Lee, Jongtaek; Lee, Sang-hwa; Kim, Jae-yong; Yi, Whikun
- 발행일
- 2013-06
- 유형
- Article
- 권
- 34
- 호
- 6
- 페이지
- 1779 ~ 1782