상세 보기
Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories (vol 9, pg 774, 2021)
Erratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843)
Erratum to “Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories”
- Lee, Jun Gyu;
- Jung, Woo Je;
- Park, Jae Hyeon;
- Yoo, Keon-Ho;
- Kim, Tae Whan
Citations
WEB OF SCIENCE
0Citations
SCOPUS
0초록
In [1], the following sentence on p. 774, second column, is revised as follows.
키워드
Flash memories; Electron devices
- 제목
- Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories (vol 9, pg 774, 2021)
- 제목 (타언어)
- Erratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843) Erratum to “Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories”
- 저자
- Lee, Jun Gyu; Jung, Woo Je; Park, Jae Hyeon; Yoo, Keon-Ho; Kim, Tae Whan
- 발행일
- 2021-09
- 유형
- Correction
- 권
- 9
- 페이지
- 813 ~ 813