고 에너지 전자빔 조사에 따른 ZnO 기판의 결함생성 및 전기적 특성 변화

초록

The electrical properties and defect states in ZnO substrates were studied during high-energy electron beam irradiations. 1 MeV and 2 MeV electron-beam with dose of 1×1016 electrons/㎠ were irradiated on Zn-surface of the sample. In the sample irradiated by 1 MeV, the leakage current was increased by electron-beam induced surface defects, while the enhancement of on/off property and the decrease of leakage current appeared in the 2 MeV irradiated sample. From the deep level transient spectroscopy measurements for these samples, it showed that the defect states with the activation energies of Ec-0.33 eV and Ev＋0.8 eV are generated during the high energy electron-beam irradiation. Especially, it considered that the Ec-0.33 eV state related with O-vacancy affects to their electrical properties.

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