Characteristics of CdTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

  • Lee, Hong Seok
  • Park, Hong Lee
  • Kim, Tai-Woong
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초록

We have studied the growth of self-assembled CdTe/ZnTe quantum dots (QDs) on both GaAs (100) and Si (100) substrates. The growth of self-assembled CdTe/ZnTe QDs on substrates shows many difficulties which are not completely solved yet. In contrast, on GaAs substrates, good crystalline quality is obtained. The results of the atomic force microscopy images showed that CdTe/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The activation energy of the electrons confined in the CdTe/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent photoluminescence spectra.

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SINGLE-ELECTRON TRANSISTORZNTE BARRIERSLASERSSEPARATIONISLANDSENERGY
제목
Characteristics of CdTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates
저자
Lee, Hong Seok Park, Hong LeeKim, Tai-Woong
DOI
10.1063/1.2201865
발행일
2006-05
유형
Article
저널명
Applied Physics Letters
88
18