광학 근접 보정 기술을 위한 다양한 위상 최적설계 방법의 비교

초록

This study applies diverse topology optimization methods to the design of masks used in photolithography processes and compares their performance in optical proximity correction (OPC). During the photolithography process, optical proximity correction technique that compensates for the effects of light interference is one of the most critical factors determining semiconductor quality. In traditional OPC, the design is performed by adjusting local parts of the mask and verifying the correction effects through simulations and experiments. Since there are limitations in obtaining optimal mask patterns by using empirical design methods, the need for mask design using the topology optimization is increasing and some studies have utilized the topology optimization using gradient-based algorithm. In this study, we compare the designs obtained from conventional optimization with those obtained from topology optimization for binary structure (TOBS) and newly developed continuated TOBS and suggest further optimization directions.

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