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Investigation of an erasing method for synaptic behaviour in a phase change device using Ge₁Cu₂Te₃ (GCT)
- An, Jun Seop;
- Choi, Chul Min;
- Shindo, Satoshi;
- Sutou, Yuji;
- Jeong, Hong Sik;
- ... Song, Yun Heub
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6Citations
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6초록
The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge₁Cu₂Te₃ is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.
키워드
Duration time; High voltage; In-phase; Long term depression; Long-term potential; Phase Change; Pulse amplitude; Time interval
- 제목
- Investigation of an erasing method for synaptic behaviour in a phase change device using Ge₁Cu₂Te₃ (GCT)
- 저자
- An, Jun Seop; Choi, Chul Min; Shindo, Satoshi; Sutou, Yuji; Jeong, Hong Sik; Song, Yun Heub
- 발행일
- 2016-09
- 유형
- Article
- 권
- 52
- 호
- 18
- 페이지
- 1514 ~ 1515