Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Devices with a Separated Double-Gate Saddle-Type Structure

초록

Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a separated double-gate (SDG) saddle structure with a recess channel region had two different doping regions in silicon-fin channel to operate two-bit per cell. A simulation results showed that the short channel effect, the cross-talk problem between cells, and the increase in threshold voltage distribution were minimized, resulting in the enhancement of the scaling-down characteristics and the program/erase speed.

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