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Strain and Hole Confinement Effect on Memory Margin of Capacitor-less Memory-cell Fabricated on Strained Si on Relaxed SiGe Layer-on-Insulator

  • 박재근
제목
Strain and Hole Confinement Effect on Memory Margin of Capacitor-less Memory-cell Fabricated on Strained Si on Relaxed SiGe Layer-on-Insulator
저자
박재근
발행일
2013-04-04
학회명
2013 MRS Spring Meeting
개최지
Moscone West

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