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Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics
- An, Byung-Kwon;
- Kim, Seong-Beom;
- Song, Yun Heub
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4초록
In this paper, Effect of bottom electrode size on Ovonic Threshold Switch(OTS) characteristics has been investigated in W/SiTe/W selector device. We fabricated SiTe Ovonic Threshold Switch(OTS) with different bottom electrode contact totally 18 sizes (34 nm - 1921 nm) and studied the differences in the bottom electrode size I-V characteristics. Ovonic Threshold Switch(OTS) device showed on/off ratio (> 10(3)) and the difference in V-t value between 218 nm and 1414 nm size.
키워드
Ovonic threshold switch; OTS; phase change random access memory; PRAM; different electrode bottom size; switch characteristics; Phase change memory; Silicon; Silicon compounds; Tellurium compounds; Electrodes; Bottom electrode contacts; Bottom electrodes; Different electrode bottom size; IV characteristics; On/off ratio; Phase change random access memory; PRAM; Threshold switches
- 제목
- Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics
- 저자
- An, Byung-Kwon; Kim, Seong-Beom; Song, Yun Heub
- 발행일
- 2020-02
- 유형
- Article
- 권
- 20
- 호
- 1
- 페이지
- 8 ~ 11