Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics

An, Byung-Kwon; Kim, Seong-Beom; Song, Yun Heub

doi:10.5573/JSTS.2020.20.1.008

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Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics

An, Byung-Kwon;
Kim, Seong-Beom;
Song, Yun Heub

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WEB OF SCIENCE

4

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4

초록

In this paper, Effect of bottom electrode size on Ovonic Threshold Switch(OTS) characteristics has been investigated in W/SiTe/W selector device. We fabricated SiTe Ovonic Threshold Switch(OTS) with different bottom electrode contact totally 18 sizes (34 nm - 1921 nm) and studied the differences in the bottom electrode size I-V characteristics. Ovonic Threshold Switch(OTS) device showed on/off ratio (> 10(3)) and the difference in V-t value between 218 nm and 1414 nm size.

키워드

Ovonic threshold switch; OTS; phase change random access memory; PRAM; different electrode bottom size; switch characteristics; Phase change memory; Silicon; Silicon compounds; Tellurium compounds; Electrodes; Bottom electrode contacts; Bottom electrodes; Different electrode bottom size; IV characteristics; On/off ratio; Phase change random access memory; PRAM; Threshold switches

제목: Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics

저자: An, Byung-Kwon; Kim, Seong-Beom; Song, Yun Heub

DOI: 10.5573/JSTS.2020.20.1.008

발행일: 2020-02

유형: Article

저널명: JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE

권: 20

호: 1

페이지: 8 ~ 11

언어: ENG

출판사: IEEK PUBLICATION CENTER

발행국가: 대한민국

분량: 4 페이지

ISSN: E 2233-4866
P 1598-1657