Characteristics of ZrO2 and HfO2 Gate Oxides Deposited by Atomic Layer Deposition (ALD) Using Metal Organic Precursors with Various Reactant Gas Sources

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Characteristics of ZrO2 and HfO2 Gate Oxides Deposited by Atomic Layer Deposition (ALD) Using Metal Organic Precursors with Various Reactant Gas Sources
저자
전형탁
발행일
2002-12-30
학회명
49th AVS International Symposium
개최지
Colorado Convention Center, Denver, Colorado