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Improving Specific Contact Resistivity of a-IGZO Thin-Film-Transistors via Multi-stack Interlayer
- Jeong, Joo Hee;
- Yoon, Seong Hun;
- Kim, Taikyu;
- Jeong, Jae Kyeong
Citations
SCOPUS
0초록
We report the effects of sputter-based multi-stack interlayer on the electrical contact properties of a-IGZO TFTs. The a-IGZO TFTs with a multi-stack interlayer of TiN and IGTO showed remarkable outcomes, including the lowest specific contact resistivity (ρC) and the highest field-effect mobility (μFET). This research suggests a highly effective approach to reduce the contact resistivity of oxide semiconductors by nearly two orders magnitude.
키워드
Amorphous oxide semiconductor; IGTO; IGZO; specific contact resistivity; thin-film transistor; Amorphous films; Amorphous semiconductors; Indium phosphide; MOS devices; MOSFET devices; Semiconducting indium phosphide; Thin film circuits
- 제목
- Improving Specific Contact Resistivity of a-IGZO Thin-Film-Transistors via Multi-stack Interlayer
- 저자
- Jeong, Joo Hee; Yoon, Seong Hun; Kim, Taikyu; Jeong, Jae Kyeong
- 발행일
- 2024-06
- 유형
- Conference paper
- 권
- 55
- 호
- 1
- 페이지
- 1490 ~ 1491