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Program/erase characteristic variations of the vertical NAND flash memory devices dependent on channel layer thickness
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Program/erase characteristic variations of the vertical NAND flash memory devices dependent on channel layer thickness
저자
김태환
발행일
2016-07-13
학회명
The 14th International Nanotech Symposium & Nano-Convergence Expo in Korea
개최지
KINTEX, KOREA
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