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초록
ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 ?/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.
키워드
ALD; Hall-effect measurement; ZnS; Atomic layer deposition; Electric properties; Energy gap; Hydrogen sulfide; Thin film transistors; Zinc sulfide; Channel mobility; Diethyl-Zinc (DEZ); Hall-effect measurement; Thin films
- 제목
- Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method
- 저자
- Kuk, Seoungwoo; Bang, Seokhwan; Kim, Inhoe; Jeon, Sunyeol; Jeon, Hyeongtag; Park, Hyung-Ho; Chang, Ho Jung
- 발행일
- 2007-01
- 유형
- Conference Paper
- 권
- 544-545
- 페이지
- 689 ~ 692