Graphene Foam Cantilever Produced via Simultaneous Foaming and Doping Effect of an Organic Coagulant

  • Noh, Sung Hyun
  • Park, Hun
  • Eom, Wonsik
  • Lee, Hak Bong
  • Kang, Dong Jun
  • ... Han, Tae Hee
  • 외 2명
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초록

Inspired by the role of cellular structures, which give three-dimensional robustness to graphene structures, a new type of graphene cantilever with mechanical resilience is introduced. Here, NH4SCN is incorporated into graphene oxide (GO) gel using it as a coagulant for GO fiber self-assembly, a foaming agent, and a dopant. Subsequent thermal treatment of the GO fiber at 600 degrees C results in the evolution of gaseous species from NH4SCN, yielding internally porous graphene cantilevers (NS-GF cantilevers). The results reveal that NS-GF cantilevers are doped with N and S and thus exhibit higher electrical conductivity (150 S cm(-1)) than that of their nonporous counterparts (38.4 S cm(-1)). Unlike conventional fibers, the NS-GF cantilevers exhibit mechanical resilience by bending under applied mechanical force but reverting to the original position upon release. The tip of the NS-GF cantilevers is coated with magnetic Fe3O4 particles, and fast mechanical movement is achieved by applying the magnetic field. Since the NS-GF cantilevers are highly conductive and elastic, they are employed as bendable, magnetodriven electrical switches that could precisely read on/off signals for >10 000 cycles. Our approach suggests a robust fabrication strategy to prepare highly electroconductive and mechanically elastic foam structures by introducing unique organic foaming agents.

키워드

self-assemblygraphene foamcoagulantsfoaming agentschemical dopingMECHANICAL-PROPERTIESOXIDENANOPARTICLESPERFORMANCESULFURANODE
제목
Graphene Foam Cantilever Produced via Simultaneous Foaming and Doping Effect of an Organic Coagulant
저자
Noh, Sung HyunPark, HunEom, WonsikLee, Hak BongKang, Dong JunCho, Jae YongSung, Tae HyunHan, Tae Hee
DOI
10.1021/acsami.9b19498
발행일
2020-03
유형
Article
저널명
ACS Applied Materials and Interfaces
12
9
페이지
10763 ~ 10771