Study on transparent and flexible memory with metal-oxide nanocrystals

초록

A memory device with the In 2O 3 nanocrystals embedded in biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer was fabricated, and its electrical and optical properties were evaluated. The In 2O 3 nanocrystals showed an irregular spherical shape with the average size and density of about 7 nm and 6×10 11cm -2, respectively. In the structure of BPDA-PDA polyimide/In 2O 3 nanocrystals/ZnO/ITO/sapphire, a current bistability by difference resistance appeared in the sweep voltage rage from -7 V to 7 V. Then, the transmittance efficiency of this was measured about 80 % between 440 nm to 800 nm by the ultraviolet-visible transmittance spectra.