Electrical and optical properties of a GaN n(+)-p junction with high-energy electron irradiation

초록

We report on the electrical and optical properties of a GaN n(+)-p junction diode structure that was grown by metal-organic chemical vapor deposition (MOCVD) and was fabricated and irradiated by using an electron beam with energies of 1 MeV and 2 MeV at electron irradiation dose of 1 x 10(15) cm(-2) and 1 x 10(16) cm(-2) for each energy. The deep level transient spectroscopy (DLTS) results show that defect states were generated in the GaN n(+)-p diodes after the electron irradiations. The defect densities and the energy locations of the defect states between the energy gap showed a dependence on the irradiation energy and dose. Also, the diode's optical responsivity was characterized in the ultraviolet region.

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