Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

초록

The electrical and the optical properties of InAs/GaAs quantum dots (QDs) grown by using atomic layer epitaxy (ALE) technique were investigated by using capacitance-voltage (C-V) and photoluminescence (PL) measurements. C-V curves showed that the plateaus related to the zero-dimensional carrier confinement effect existed and that the number of electrons occupying the InAs QD was approximately 7. The full width at half maxima of the interband transitions from the ground electronic subband to the ground heavy-hole subband and from the first excited electronic state to the first excited state heavy-hole subband were not significantly affected by the temperature variation, indicative of strong confinement of the carriers occupying the InAs QDs. These results can help improve understanding for applications of InAs/GaAs QDs grown by using ALE in high-efficiency electronic and optoelectronic devices.

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