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Effect of Two-step Oxidation in Ge Condensation on Surface Roughness Property of Relaxed SiGe layer-on-insulator Substrates
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Effect of Two-step Oxidation in Ge Condensation on Surface Roughness Property of Relaxed SiGe layer-on-insulator Substrates
저자
박재근
발행일
2012-10-10
학회명
222nd ECS Meeting
개최지
Hawaii Convention Center and the Hilton Hawaiian Village
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