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초록
Strained potential profiles and electronic subband energies of InAs/GaAs coupled double quantum dots (DQDs) were calculated by using a three-dimensional finite-difference method (FDM) taking into account shape-based strain and nonparabolic effects. The interband transition energies from the ground electronic subband to the ground heavy-hole band (E-1-HH1) in the InAs/GaAs DQDs, as determined from the FDM calculations taking into account strain and nonparabolic effects, were in reasonable agreement with the experimental peaks corresponding to the (E-1-HH1) interband transition energies at several temperatures, as determined from the temperature-dependent photoluminescence spectra.
키워드
Nanostructures; Electronic states; Optical properties; Current voltage characteristics; Frequency division multiplexing; Optical properties; Optical waveguides; Orthogonal frequency division multiplexing; Quantum electronics; Semiconductor quantum dots; Three dimensional; A. Nanostructures; D. Electronic states; D. Optical properties; Double quantum dots; Effect of strains; Electronic subband energies; Finite-difference methods; Hole bands; InAs/GaAs; Interband transition energies; Nonparabolicity; Photoluminescence spectrums; Potential profiles; Reasonable agreements; Shape-based; Sub bands; Semiconductor quantum wells
- 제목
- Effect of strain and nonparabolicity on interband transition energies of InAs/GaAs coupled double quantum dots
- 저자
- Kwon, Hye Young; Woo, Jun Taek; Lee, Dea Uk; Kim, Tae Whan; Park, Young Ju
- 발행일
- 2009-01
- 유형
- Article
- 권
- 149
- 호
- 1-2
- 페이지
- 52 ~ 55