Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

Ma, Zehao; Ooi, Poh Choon; Li, Fushan; Yun, Dong Yeol; Kim, Tae Whan

doi:10.1007/s11664-015-3872-8

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Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

Ma, Zehao;
Ooi, Poh Choon;
Li, Fushan;
Yun, Dong Yeol;
Kim, Tae Whan

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WEB OF SCIENCE

6

Citations

SCOPUS

7

초록

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013R1A2A1A01016467).

키워드

Nonvolatile memory; polymethylsilsesquioxane; CdSe/ZnS quantum dot; electrical bistability; conduction mechanisms; FIELD; Cadmium compounds; II-VI semiconductors; Nanocrystals; Nonvolatile storage

제목: Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

저자: Ma, Zehao; Ooi, Poh Choon; Li, Fushan; Yun, Dong Yeol; Kim, Tae Whan

DOI: 10.1007/s11664-015-3872-8

발행일: 2015-10

유형: Article

저널명: Journal of Electronic Materials

권: 44

호: 10

페이지: 3962 ~ 3966