Dependence on organic thickness of electrical characteristics behavior in low molecular organic novolatile memory

초록

We developed the devices to investigate the dependence on the organic thickness of electrical characteristics in small molecular organic nonvolatile memory. We developed four different thicknesses of organic layers, i.e., 30, 40, 50, and 100 nm, with a fixed middle layer thickness, were deposited using a high vacuum thermal evaporation. We confirmed that, as the organic layer thickness increases, the current level linearly decreases by an order of magnitude in a log-scale except for the 100-nm sample. The reason for this is that electron transfer occurs less frequently because of the decrease in the hopping frequency. Meanwhile, the switching characteristics did not much change. Therefore, we can conclude that the thickness of the organic layer does not significantly affect the switching characteristics except current level. In addition, it was confirmed that a 30-nm-thick organic layer was the best process condition for fabricating low-molecular organic nonvolatile memory.

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