Optimization of active antireflection ZnO films for p-GaAs-based heterojunction solar cells

초록

We have optimized the photovoltaic properties of active ZnO/p-GaAs heterojunction solar cells by pulsed laser deposition method by varying the oxygen pressure from 0 to 50 mTorr during the fabrication process. We observed the crystallinity and grain size of ZnO enhanced with increasing oxygen pressure from 0 to 30 mTorr. In addition, with this increase of oxygen flux, the intensity of E1(LO) modes obtained by Raman measurements declines significantly and almost disappears under an oxygen pressure of 50 mTorr. The change of intensity is assumed to be the change of oxygen vacancy and zinc interstitial concentrations in ZnO films with oxygen pressures. Current-voltage measurements and extractions show that ZnO grown at 30 mTorr displays the best performance with the ISC of 24.3 mA/cm2, the efficiency of 8.746 %, and FF0 of 68.73 %. The high performance of the heterojunction solar cell grown at the oxygen partial pressure of 30 mTorr might be due to the reduction of oxygen vacancies by increasing oxygen during the deposition. The results reveal the importance of the oxygen processing gas in promoting devices performance.

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