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Low-temperature processed IGTO thin-film transistors with high mobility by reducing deposition pressure
- Kim, Hyeon-A;
- Kim, Jeong Oh;
- Hur, Jae Seok;
- Jeong, Jae Kyeong
Citations
SCOPUS
0초록
The sputtered IGTO films were prepared as the channel for the oxide thin-film transistors. The effects of chamber pressure (Pc) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. While at high Pc exhibited degraded device performance, the IGTO transistors fabricated at tow Pc and low annealing temperature of 150 °C showed a high mobility of 35.0 cm2/Vs and a low subthreshold gate swing of 0.17 V/decade.
키워드
Densification; Indium gallium tin oxide (IGTO); Low temperature; Mobility; Sputtering; Carrier mobility; Densification; Deposition; Gallium compounds; Indium compounds; Oxide films; Sputtering; Temperature; Thin film transistors; Thin films; Tin oxides; Annealing temperatures; Chamber pressure; Channel layers; Deposition pressures; Device performance; High mobility; Low temperatures; Oxide thin-film transistors; Thin film circuits
- 제목
- Low-temperature processed IGTO thin-film transistors with high mobility by reducing deposition pressure
- 저자
- Kim, Hyeon-A; Kim, Jeong Oh; Hur, Jae Seok; Jeong, Jae Kyeong
- 발행일
- 2018-12
- 유형
- Conference Paper
- 저널명
- Proceedings of the International Display Workshops
- 권
- 1
- 페이지
- 340 ~ 342