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High-K and low loss Bi1.5Zn1.0Nb1.5O 7/polyimide composite films for application in embedded capacitors
- Choi, Seung-Hoon;
- Kim, Il-Doo;
- Hong, Jae-Min;
- Oh, Seong-Geun
Citations
SCOPUS
1초록
We report on the role of Bi1.5Zn1.0Nb 1.5O7 (BZN) ceramic fillers in notably reducing the dielectric loss of BZN/polyimide composite films manufactured for application in flexible RF embedded capacitors. The composite films were synthesized using a colloidal process. INAAT (isopropyl tris(N-amino-ethyl aminoethyl)titanate) was used as a coupling agent for homogeneous dispersion of BZN particles into a polyimide matrix. The BZN/polyimide composite films (BZN content at 50 Vol%) exhibited a low dielectric loss of 0.0369 at 12 MHz while retaining a high dielectric constant of 14.75.
키워드
BZN; Capacitors; Dielectric properties; Embedded; Polyimides; Capacitors; Coupling agents; Dielectric losses; Permittivity; Polyimides; Polymer matrix; Embedded capacitors; Polyimide matrix; Composite films
- 제목
- High-K and low loss Bi1.5Zn1.0Nb1.5O 7/polyimide composite films for application in embedded capacitors
- 저자
- Choi, Seung-Hoon; Kim, Il-Doo; Hong, Jae-Min; Oh, Seong-Geun
- 발행일
- 2007-03
- 유형
- Conference Paper
- 권
- 249-250
- 페이지
- 241 ~ 246