Photoluminescence properties of ZnO films grown on Si grating and Si logo patterns

초록

We investigated the spatially selective photoluminescence (PL) characteristics of the ZnO grating and ZnO logo patterns. In order to find whether the crystalline ZnO patterns can be used in the optical data storage using PL, the ZnO grating and ZnO logo patterns were prepared by depositing ZnO films on the corresponding Si patterns by the glancing angle deposition method and annealed by the furnace at the temperature of 500 °C. The Si grating and the Si logo patterns were fabricated on the Si substrates using deep reactive ion etching process. From the micro-PL measurement for the ZnO grating and ZnO logo patterns, we verified that the spatial distributions of PL intensities of the ZnO grating and the ZnO logo patterns were well matched to their surface-relief profiles. From the PL spectra and the XRD spectra for the uniform ZnO films and the patterned ZnO films, we confirmed that the 500 °C-annealed film had a strong UV emission and showed improved crystal quality.