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Oxidant effect on resistance switching characteristics of HfO2 film grown atomic layer deposition
- Park, In-Sung;
- Lee, Jooho;
- Yoon, Seungki;
- Chung, Keum Jee;
- Lee, Sunwoo;
- ... Ahn, Jinho;
- 외 2명
Citations
SCOPUS
6초록
The resistance switching phenomena of Mo/HfO2/Mo resistors were investigated with HfO2 films formed by using different oxidants. HfO2 films were atomic layer deposited using H2O, D 2O, and O3 as oxidants, respectively. Repeatable and reliable resistance switching behaviors were obtained with H2O- and D2O-processed HfO2 films whereas O3-processed film showed only insulating breakdown. The depth profiles such as carbon in H2O- and O3-processed HfO2 films were probed using auger electron spectroscopy. The carbon content detected near the top interface of H2O-processed HfO2 film is helpful to appear the resistance switching behavior.
키워드
Atomic layers; On-resistance (Rons); Resistance switching; Atomic physics; Atoms; Blood vessel prostheses; Hafnium compounds; Health; Pulsed laser deposition; Atomic layer deposition
- 제목
- Oxidant effect on resistance switching characteristics of HfO2 film grown atomic layer deposition
- 저자
- Park, In-Sung; Lee, Jooho; Yoon, Seungki; Chung, Keum Jee; Lee, Sunwoo; Park, Jungho; Kim, Chang Kyung; Ahn, Jinho
- 발행일
- 2007-10
- 유형
- Conference Paper
- 저널명
- ECS Transactions
- 권
- 11
- 호
- 7
- 페이지
- 61 ~ 66