Effect of ozone concentration on atomic layer deposited HfO2 on Si

Chung, K.J.; Park, T.J.; Sivasubramani, P.; Kim, J.; Ahn, J.

doi:10.1149/1.3375604

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Effect of ozone concentration on atomic layer deposited HfO2 on Si

Chung, K.J.;
Park, T.J.;
Sivasubramani, P.;
Kim, J.;
Ahn, J.

Citations

SCOPUS

3

초록

Effect of ozone concentration (200-400 g/Nm3) on atomic layer deposition of HfO2 thin films on Si wafers using tetrakis (dimethylamino)hafhium (TDMAHf) as Hf precursor was systematically studied. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses show that oxidation of the Si substrate enhances with ozone concentration which leads to an increase in interfacial layer (TL) thickness between the high-k dielectric and the substrate. The relatively thicker IL successfully suppresses additional growth of itself and Si out-diffusion into the dielectric during post deposition annealing (PDA). Corresponding electrical characteristics such as capacitance-voltage, leakage current density and time zero dielectric breakdown display significant improvement for HfO2 film prepared using higher ozone concentration after PDA.

키워드

Atomic layer deposited; Capacitance voltage; Electrical characteristic; High-k dielectric; Interfacial layer; Out-diffusion; Ozone concentration; Post deposition annealing; Si substrates; Si wafer; Tetrakis; Time-zero dielectric breakdowns; Atomic layer deposition; Concentration (process); Current voltage characteristics; Hafnium; Hafnium compounds; High resolution transmission electron microscopy; Leakage currents; Logic gates; Ozone; Ozone layer; Silicon; Silicon wafers; X ray photoelectron spectroscopy; Semiconducting silicon compounds

제목: Effect of ozone concentration on atomic layer deposited HfO2 on Si

저자: Chung, K.J.; Park, T.J.; Sivasubramani, P.; Kim, J.; Ahn, J.

DOI: 10.1149/1.3375604

발행일: 2010-00

유형: Conference Paper

저널명: ECS Transactions

권: 28

호: 1

페이지: 221 ~ 226