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Low-Power a-IGZO TFT Shift Register Featuring i-PUA Gate Dielectric
- Yun, Eseudeo;
- Kim, Yongchan;
- Choi, Hanbin;
- Choi, Dukhyun;
- Kim, Do Hwan;
- 외 1명
Citations
SCOPUS
0초록
In this paper, a low-power shift register circuit based on coplanar a-IGZO TFTs using photo-patternable micron-sized i-PUA is proposed for next-generation display. We confirmed that the fabricated shift register circuit consisting of six coplanar a-IGZO TFTs and one capacitor successfully operates with low-power driving within 3 V at various frequencies.
키워드
coplanar structure; electric double layer; ionic polyurethane acrylate (i-PUA); low-power consumption; solution-processed a-IGZO; Thin film transistors; Electric power utilization; Gate dielectrics; Low power electronics; Semiconducting indium compounds; Shift registers; Thin film circuits; Thin film transistors; C. thin film transistor (TFT); Coplanar structure; Double layers; Electric double layer; Ionic polyurethane acrylate; Low-power consumption; Lower-power consumption; Polyurethane/acrylate; Solution-processed; Solution-processed a-IGZO
- 제목
- Low-Power a-IGZO TFT Shift Register Featuring i-PUA Gate Dielectric
- 저자
- Yun, Eseudeo; Kim, Yongchan; Choi, Hanbin; Choi, Dukhyun; Kim, Do Hwan; Lee, Hojin
- 발행일
- 2022-06
- 유형
- Conference Paper
- 권
- 53
- 호
- 1
- 페이지
- 1192 ~ 1195
- 언어
- ENG
- 분량
- 4 페이지
- ISSN
- E 2168-0159
P 0097-966X