Resistive switching memory based on organic/inorganic hybrid perovskite materials

Liu, Yang; Li, Fushan; Chen, Zhixin; Guo, Tailiang; Wu, Chaoxing; Kim, Tae Whan

doi:10.1016/j.vacuum.2016.05.010

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Resistive switching memory based on organic/inorganic hybrid perovskite materials

Liu, Yang;
Li, Fushan;
Chen, Zhixin;
Guo, Tailiang;
Wu, Chaoxing;
외 1명

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89

초록

In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10(3). Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories.

키워드

Perovskite; Memory; Resistive switching; BISTABLE DEVICES; FIELD; MECHANISM; CELLS

제목: Resistive switching memory based on organic/inorganic hybrid perovskite materials

저자: Liu, Yang; Li, Fushan; Chen, Zhixin; Guo, Tailiang; Wu, Chaoxing; Kim, Tae Whan

DOI: 10.1016/j.vacuum.2016.05.010

발행일: 2016-08

유형: Article

저널명: Vacuum

권: 130

페이지: 109 ~ 112