Stress measurements during thin film zirconium oxide growth

  • Kim, Yong-Soo
  • Jeong, Yong-Hwan
  • Jang, Jeong-Nam
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초록

Stress accumulation during thin film zirconium oxide growth was successfully measured using new curvature measurement technique and stress of up to 5.1 GPa was observed in an approximately 50 nm thick oxide film. Experimental results also show that steam and air oxidation make little difference in the stress profile on the oxide film thickness, especially during the early stage of oxidation. This result possibly supports the theory that zirconium corrosion kinetics crucially depends on the oxide phase transformation at the metal-oxide interface. Apparent discrepancies between previous studies were interpreted in terms of stress relaxation effects on the measurements.

키워드

OXIDATIONZIRCALOY-2ALLOYSMECHANISM
제목
Stress measurements during thin film zirconium oxide growth
저자
Kim, Yong-SooJeong, Yong-HwanJang, Jeong-Nam
DOI
10.1016/j.jnucmat.2011.03.001
발행일
2011-05
유형
Article
저널명
Journal of Nuclear Materials
412
2
페이지
217 ~ 220