Programmable Threshold Logic Implementations in a Memristor Crossbar Array

  • Youn, Sangwook; 
  • Lee, Jungjin; 
  • Kim, Sungjoon; 
  • Park, Jinwoo; 
  • Kim, Kyuree; 
  • ... Kim, Hyungjin
Citations

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Citations

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43

초록

In this study, we demonstrate the implementation of programmable threshold logics using a 32 x 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the annealing process, its accurate programming characteristics are presented by a 256-level grayscale image. By simultaneous subtraction between weighted sum and threshold values with a differential pair in an opposite way, 3-input and 4-input Boolean logics are implemented in the crossbar without additional reference bias. Also, we verify a full-adder circuit and analyze its fidelity, depending on the device programming accuracy. Lastly, we successfully implement a 4-bit ripple carry adder in the crossbar and achieve reliable operations by read-based logic operations. Compared to stateful logic driven by device switching, a 4-bit ripple carry adder on a memristor crossbar array can perform more reliably in fewer steps thanks to its read-based parallel logic operation.

키워드

memristors; neuromorphic; computing-in-memory; threshold logic; full adder; MEMORY; OPERATIONS
제목
Programmable Threshold Logic Implementations in a Memristor Crossbar Array
저자
Youn, Sangwook; Lee, Jungjin; Kim, Sungjoon; Park, Jinwoo; Kim, Kyuree; Kim, Hyungjin
DOI
10.1021/acs.nanolett.3c04073
발행일
2024-03
유형
Article; Early Access
저널명
Nano Letters
권
24
호
12
페이지
3581 ~ 3589