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Current status on the n/p type oxide semiconductor materials and the associated devices using atomic layer deposition
- Park, Jin-Seong;
- Hong, TaeHyun;
- Choi, Wanho;
- Kim, Hyemi;
- Choi, Su Hwan
Citations
SCOPUS
0초록
Atomic Layer Deposition (ALD) has been introduced for oxide semiconductor synthesis and the device applications. Interestingly, ALD enable to deposit not only high-performance oxide semiconductor (a-IGZO etc.) but also p-type oxide semiconductors (CuO and SnO) at low deposition temperature. It will have a great potential to solve the current material and device issues. ALD will be the emerging thin film process in the coming display application.
키워드
Atomic Layer Deposition (ALD); N-type; Oxide Semiconductor; P-type; Thin Film Transistor (TFT); Atoms; Copper oxides; Oxide semiconductors; Semiconducting indium compounds; Thin film circuits; Thin film transistors; Thin films; Atomic layer deposition; Atomic-layer deposition; C. thin film transistor (TFT); Current status; Device application; N-type; P-type; P-type oxide semiconductors; Performance; Thin film transistor; Atomic layer deposition
- 제목
- Current status on the n/p type oxide semiconductor materials and the associated devices using atomic layer deposition
- 저자
- Park, Jin-Seong; Hong, TaeHyun; Choi, Wanho; Kim, Hyemi; Choi, Su Hwan
- 발행일
- 2021-12
- 유형
- Conference Paper
- 저널명
- Proceedings of the International Display Workshops
- 권
- 27
- 페이지
- 137 ~ 140
- 언어
- ENG
- 분량
- 4 페이지
- ISSN
- P 1883-2490