저장 장치를 위한 다양한 부호화 기법의 성능 분석

초록

Storage devices such as memories are widely used in various electronic products. They require high-density memory and currently the data has been stored in multi-level format, that results in high error rate. In this paper, we apply error correction schemes that are widely used in communication system to the storage devices for satisfying low bit error rate and high code rate. In AWGN channel with average BER 10-5 and 5×10-6, we study error correction schemes for 4-level cell to achieve target code rate 0.99 and target BER 10-11 and 10-13, respectively. Since block codes may perform better than the concatenated codes for high code rate, and it is important to use less degraded inner code even when many bits are punctured. The performance of concatenated codes using general feedforward systematic convolutional codes are worse than the block code only scheme. The simulation results show that RSC codes must be used as inner codes to achieve good performance of punctured convolutional codes for high code rate.

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