Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator

초록

We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In2O3 nano-particles embedded in polyimide insulator. Self-assembled In2O3 nano-partictes were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In2O3 nano-particles were 7 nm and 6 x 10(11) cm(-2), respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In2O3 nano-particles. And a memory window measured about 1 V at initial status.

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