Nonvolatile memory cell effect in multilayered Ni1-xFex self-assembled nanoparticle arrays in polyimpide

초록

Transmission electron microscopy images showed that self-assembled Ni1-xFex nanoparticle arrays were periodically inserted in the polyimide (PI) layers. Capacitance-voltage (C-V) measurements on Al/PI/multiple-stacked Ni1-xFex nanoparticle arrays/PI/p-Si (100) structures at 300 K showed a metal-insulator-semiconductor capacitor behavior with different flatband voltage shifts, which depended on the value of the sweep voltage, due to the variations of the charged electron density in the multiple-stacked Nil,Fe, nanoparticle arrays. Conductance-voltage (G-V) measurements showed that the conductance peak related to the interface trap disappeared, and that the positions of the C-V and the G-V hystereses at the sweep voltage were different.

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