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Improving etchability and imaging performance of EUV mask absorber materials via ion implantation (Vol 132, 245, 2026)
Correction: Improving etchability and imaging performance of EUV mask absorber materials via ion implantation (Applied Physics A, (2026), 132, 4, (245), 10.1007/s00339-026-09450-0)
- Kim, Yunsoo;
- Jeong, Dongmin;
- Lee, Seungho;
- Kim, Bom-Sok;
- Kim, Myung-Jin;
- ... Ahn, Jinho;
- 외 1명
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In this article Jinho Ahn should have been denoted as a corresponding author. The original article has been updated. © The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2026.
- 제목
- Improving etchability and imaging performance of EUV mask absorber materials via ion implantation (Vol 132, 245, 2026)
- 제목 (타언어)
- Correction: Improving etchability and imaging performance of EUV mask absorber materials via ion implantation (Applied Physics A, (2026), 132, 4, (245), 10.1007/s00339-026-09450-0)
- 저자
- Kim, Yunsoo; Jeong, Dongmin; Lee, Seungho; Kim, Bom-Sok; Kim, Myung-Jin; Lee, Taeho; Ahn, Jinho
- 발행일
- 2026-04
- 유형
- Correction
- 권
- 132
- 호
- 5
- 페이지
- 1 ~ 1
- 언어
- ENG
- 출판사
- SPRINGER HEIDELBERG
- 발행국가
- 독일
- 분량
- 1 페이지
- ISSN
- E 1432-0630
P 0947-8396