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High Oxide-to-poly Si Removal Selectivity Ceria Slurry for Poly Si Stop Chemical Mechanical Planarization (CMP) in Multi-level Cell (MLC) NAND Flash Memory below 51nm
- 제목
- High Oxide-to-poly Si Removal Selectivity Ceria Slurry for Poly Si Stop Chemical Mechanical Planarization (CMP) in Multi-level Cell (MLC) NAND Flash Memory below 51nm
- 저자
- 백운규
- 발행일
- 2011-04-28
- 학회명
- 2011 MRS spring meeting
- 개최지
- San Francisco, USA