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Designing Robust Interfaces of HZO Module (>1012 at 85 °c) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM
- Jeon, Intak;
- Lim, Hanjin;
- Kim, Seon-yong;
- Kim, Jin-soak;
- Ahn, Sehyoung;
- ... Kwon, Daewoong;
- 외 3명
Citations
SCOPUS
4초록
Energy-efficient AI will be realized in conjunction with ferroelectric nT-mF in the near future. First, we present a ferroelectric module solution that is equipped with Pr-boosted HZO (2Pr 54 μ C/cm2) and universally improved ILs for FE, MPB and AFE. The films show high write/read endurance cycles (> 1012 at 85 °C). Second, we implement the solution into 1T-1F with a common plate line and 1T-nF FeRAM. We confirm sufficiently high sensing margins (≥300 mV).
키워드
Common plate line; 1T-1F; 1T-nF; HZO
- 제목
- Designing Robust Interfaces of HZO Module (>1012 at 85 °c) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM
- 저자
- Jeon, Intak; Lim, Hanjin; Kim, Seon-yong; Kim, Jin-soak; Ahn, Sehyoung; Jung, Changhwa; Kwon, Daewoong; Kwon, Hyucknam; Park, Sung-Wook
- 발행일
- 2025-07
- 유형
- Conference paper
- 저널명
- Digest of Technical Papers - Symposium on VLSI Technology
- 페이지
- 1 ~ 3
- 언어
- ENG
- 분량
- 3 페이지
- ISSN
- E 2158-9682
P 0743-1562