American Law and Economics Review

ISSN
P 1465-7252
출판사
Oxford University Press OUP
국가
USA
발행 상태
활성

데이터베이스 수록 정보

A&HCI 2010 (1년)
JCR 2010-2019 (10년)
Scopus 2017-2020 (4년)
SJR 2006-2019 (14년)
SSCI 2010-2021 (12년)

전체 54건 중 1번부터 10번까지의 결과를 표시합니다.

2026
Article

A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention

  • Kang, Hyunjun
  • Joh, Hongrae
  • Kwak, Junhyeok
  • Kim, Giuk
  • Choi, Hyojun
  • ... Ahn, Jinho
  • 외 7명
  • 2026-05
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Characterization of a 10 × 10 Amorphous-InGaZnO Memristor Crossbar Array and Its Binary-Neural-Network Performance for 1T1M Integration

  • Myoung, Seung Joo
  • Shin, Dong Hyeop
  • Yang, Tae Jun
  • Lee, Jae Woo
  • Eo, Soohong
  • ... Song, Ickhyun
  • 외 6명
  • 2026-05
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Low-Power, High-Performance, and Highly Reliable EM Gate Driver Circuit Using LTPO Technology for Mobile Displays

  • Wee, Sung-Min
  • Jang, Jun-Hyeok
  • Keum, Nack-Hyun
  • Moon, Hee-Ju
  • Song, Hee-Rim
  • ... Lim, Jaemyung
  • 외 2명
  • 2026-01
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2025
Article

Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In-Sn-O Field-Effect Transistors

  • 2025-12
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Physical Unclonable Function With Enlarged String Current Variation in NAND Flash Array by WL Selection Scheme

  • 2025-10
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Extended Photodiode Scheme for Enhancement of Demodulation Contrast in Indirect Time-of-Flight Sensors

  • Suk, Chan Hee
  • Park, Jae Hyeon
  • Kim, Hyung Soon
  • Yoo, Keon-Ho
  • Kim, Tae Whan
  • 2025-09
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer

  • Kim, Giuk
  • Kim, Taeho
  • Choi, Hyojun
  • Shin, Seokjoong
  • Kim, Hoon
  • ... Ahn, Jinho
  • 외 6명
  • 2025-09
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Low-Temperature (450 °C) Crystallization of Al:HfO2 Ferroelectric Thin Films Enabled by Microwave Annealing Process

  • Kim, Giuk
  • Zhang, Lingwei
  • Lee, Sangho
  • Shin, Hunbeom
  • Lim, Youngjin
  • ... Ahn, Jinho
  • 외 4명
  • 2025-08
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Achieving Morphotropic Phase Boundary at Extremely Low-Temperature (200 °C) in HZO (>10 nm) Films Using Microwave Annealing

  • Jung, Taeseung
  • Shin, Hunbeom
  • Ahn, Jinho
  • Jeon, Sanghun
  • 2025-06
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Effects of Mechanical Stress on Electrical Characteristics of IGZO-Based Integrated 1T1M on Flexible Substrate

  • Myoung, Seung Joo
  • Lee, Hyunkyu
  • Shin, Dong Hyeop
  • Seo, Youngjin
  • Kim, Wonjung
  • ... Song, Ickhyun
  • 외 6명
  • 2025-05
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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