Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface

Choi, Jeong-M.; Jeong, Seong Hun; Hwang, Do Kyung; Im, Seongil; Lee, Byoung H.; Sung, Myoung M.

doi:10.1016/j.orgel.2008.09.006

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Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface

Choi, Jeong-M.;
Jeong, Seong Hun;
Hwang, Do Kyung;
Im, Seongil;
Lee, Byoung H.;
... Sung, Myoung M.

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18

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22

초록

We report on the fabrication of rubrene thin-film transistors (TFTs) with surface-modified dielectrics adopting several kinds of self-assembled-monolayer (SAM) on SiO2/P+-Si substrate. With the dielectric of lower surface energy, the crystalline rubrene growth or amorphous-to-crystalline transformation kinetics is faster during in-situ vacuum post-annealing, which was performed after rubrene vacuum deposition. In the present study, hexamethyldisilazane (HMDS) was finally determined to be the most effective SAM inter-layer for polycrystalline rubrene channel formation. Our rubrene TFT with HMDS-coated SiO2 dielectric showed quite a high field mobility of similar to 10(-2) cm(2)/V s and a high on/off current ratio of similar to 10(5) under 40V.

키워드

Organic thin-film transistor; Rubrene; Self-assembled-monolayer; Surface treatment on dielectrics; FIELD-EFFECT TRANSISTORS

제목: Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface

저자: Choi, Jeong-M.; Jeong, Seong Hun; Hwang, Do Kyung; Im, Seongil; Lee, Byoung H.; Sung, Myoung M.

DOI: 10.1016/j.orgel.2008.09.006

발행일: 2009-02

유형: Article

저널명: Organic Electronics: physics, materials, applications

권: 10

호: 1

페이지: 199 ~ 204