테라헤르츠파를 이용한 실리콘 웨이퍼의 도핑 정도와 물리적 특성 측정에 관한 연구

초록

In this study, a terahertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of 30 degrees were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from 1014 to 1018 in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer.

키워드