Intense pulsed light-induced millisecond selective heat treatment for high-performance silicon anodes

초록

Silicon, which is gaining prominence as a potential anode material, exhibits long-term cycle stability issues owing to volume changes during cycling. This study presents a meticulously designed Si anode that employs intense pulsed light (IPL) technology to simultaneously reduce carbon additives and construct an effective carbon quantum dot (CQD)-derived binder system. IPL, as a light-material interaction technique, offers a novel approach for selective heat treatment with remarkably short processing durations on the order of milliseconds. By comprehensively considering the geometric structure, optical characteristics, and thermal properties of each electrode component, heat transfer bridge (HTB) materials are introduced to ensure a homogeneous depth-directional heat treatment and to minimize binder decomposition in the IPL process. By employing HTB materials, the binder can reach a controlled target temperature for the condensation reaction between poly (acrylic acid) and the CQDs. Simultaneously, higher heat generation in the conductive carbon than in the binder leads to selective additional carbon reduction. This unique approach provides selective heat treatment, which cannot be achieved using conventional methods, resulting in a Si anode with excellent cyclic stability and rate capability. The versatility of the IPL technology is further demonstrated by applying it to relatively inexpensive Si microparticles.

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