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Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2-propoxide with Diethylzinc
- Lee, Byoung H.;
- Hwang, Jae K.;
- Nam, Jae W.;
- Lee, Song U.;
- Kim, Jun T.;
- ... Sung, Myung M.;
- 외 3명
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103초록
A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.
키워드
atomic layer deposition; copper; surface chemistry; thin films; zinc; CHEMICAL-VAPOR-DEPOSITION; ASSEMBLED MONOLAYERS; TITANIUM-OXIDE; TIO2; XPS; CU
- 제목
- Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2-propoxide with Diethylzinc
- 저자
- Lee, Byoung H.; Hwang, Jae K.; Nam, Jae W.; Lee, Song U.; Kim, Jun T.; Koo, Sang-M.; Baunemann, A.; Fischer, Roland A.; Sung, Myung M.
- 발행일
- 2009-06
- 유형
- Article
- 권
- 48
- 호
- 25
- 페이지
- 4536 ~ 4539