Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2-propoxide with Diethylzinc

  • Lee, Byoung H.
  • Hwang, Jae K.
  • Nam, Jae W.
  • Lee, Song U.
  • Kim, Jun T.
  • ... Sung, Myung M.
  • 외 3명
Citations

WEB OF SCIENCE

93
Citations

SCOPUS

103

초록

A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.

키워드

atomic layer depositioncoppersurface chemistrythin filmszincCHEMICAL-VAPOR-DEPOSITIONASSEMBLED MONOLAYERSTITANIUM-OXIDETIO2XPSCU
제목
Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2-propoxide with Diethylzinc
저자
Lee, Byoung H.Hwang, Jae K.Nam, Jae W.Lee, Song U.Kim, Jun T.Koo, Sang-M.Baunemann, A.Fischer, Roland A.Sung, Myung M.
DOI
10.1002/anie.200900414
발행일
2009-06
유형
Article
저널명
Angewandte Chemie - International Edition
48
25
페이지
4536 ~ 4539