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A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique
- Jo, Seo-Hyeon;
- Kang, Dong-Ho;
- Shim, Jaewoo;
- Jeon, Jaeho;
- Jeon, Min Hwan;
- ... Choi, Changhwan;
- 외 7명
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160Citations
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166초록
The effects of triphenylphosphine (PPh3)-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2) photodetector are systematically studied, and a very high performance WSe2/h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 x 10⁶ A W-1) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.
키워드
nondegenerate doping; photodetectors; PPh3; type-converted FET; WSe2; FIELD-EFFECT TRANSISTORS; MONOLAYER MOS2; WSE2; GRAPHENE; PHOTORESPONSE; GROWTH; MONO
- 제목
- A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique
- 저자
- Jo, Seo-Hyeon; Kang, Dong-Ho; Shim, Jaewoo; Jeon, Jaeho; Jeon, Min Hwan; Yoo, Gwangwe; Kim, Jinok; Lee, Jaehyeong; Yeom, Geun Young; Lee, Sungjoo; Yu, Hyun-Yong; Choi, Changhwan; Park, Jin-Hong
- 발행일
- 2016-06
- 유형
- Article
- 권
- 28
- 호
- 24
- 페이지
- 4824 ~ 4831