Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Jeon, Pyo Jin; Lee, Young Tack; Ha, Ryong; Choi, Heon-Jin; Yoon, Kwan Hyuck; Sung, Myung M.; Im, Seongil

doi:10.1063/1.4739520

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Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Jeon, Pyo Jin;
Lee, Young Tack;
Ha, Ryong;
Choi, Heon-Jin;
Yoon, Kwan Hyuck;
... Sung, Myung M.;
외 1명

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초록

We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 degrees C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of similar to 10(6), while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of similar to 1.51 along with an on/off ratio of similar to 10(3).

키워드

OPTICAL-PROPERTIES; EFFECT TRANSISTORS; CONTROLLED GROWTH; PLASMA TREATMENT; SCHOTTKY DIODES; EMISSION; FABRICATION; IMPROVEMENT; NANORODS; CIRCUITS

제목: Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

저자: Jeon, Pyo Jin; Lee, Young Tack; Ha, Ryong; Choi, Heon-Jin; Yoon, Kwan Hyuck; Sung, Myung M.; Im, Seongil

DOI: 10.1063/1.4739520

발행일: 2012-07

유형: Article

저널명: Applied Physics Letters

권: 101

호: 4

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