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Generation of Zn2SiO4 Nanocrystallites in a Shell of ZnO/SiOx Core-Shell Nanowires to Change Photoluminescence Properties
- Kim, Hyoun Woo;
- Yang, Ju Chan;
- Na, Han Gil;
- Kwak, Dong Sub;
- Lee, Chongmu
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7초록
This study addresses the annealing effects of ZnO/SiOx core-shell nanowire optical properties, in terms of Zn2SiO4 crystallite generation. At 700 A degrees C, the integrated PL intensity of deep-level emission was increased by annealing. With regard to UV emission, free exciton (FX) peak intensity was reduced and the ratio of FX to non-FX peak intensities increased as annealing temperature was increased. These annealing induced changes, including the enhancement of deep-level emission and suppression of FX emission, are mainly related to the generation of Zn2SiO4 crystallites. Transmission electron microscopy revealed that Zn2SiO4 crystallites were formed inside the SiOx shell layer.
키워드
nanostructured materials; sputtering; optical properties; transmission electron microscopy (TEM); annealing; ZNO; TEMPERATURE; ULTRAVIOLET; EXCITON; SILICON; FABRICATION; NANOSTRUCTURES; ENHANCEMENT; NANOTUBES
- 제목
- Generation of Zn2SiO4 Nanocrystallites in a Shell of ZnO/SiOx Core-Shell Nanowires to Change Photoluminescence Properties
- 저자
- Kim, Hyoun Woo; Yang, Ju Chan; Na, Han Gil; Kwak, Dong Sub; Lee, Chongmu
- 발행일
- 2012-08
- 유형
- Article
- 권
- 18
- 호
- 4
- 페이지
- 705 ~ 710